Ion beam current uniformity monitor, ion implanter and related method
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsWilliam G. Callahan, Morgan D. Evans, George M. Gammel, Norman E. Hussey, Gregg A. Norris, Joseph C. Olson
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Abstract
An ion beam current uniformity monitor, ion implanter and related method are disclosed. In one embodiment, the ion beam current uniformity monitor includes an ion beam current measurer including a plurality of measuring devices for measuring a current of an ion beam at a plurality of locations; and a controller for maintaining ion beam current uniformity based on the ion beam current measurements by the ion beam current measurer.
Claims35
A method comprising:
- measuring an ion beam current prior to ion implanting at each of a plurality of locations within the ion beam;
- ion implanting at least one wafer;
- periodically measuring the ion beam current during ion implanting at each of the plurality of locations within the ion beam;
- and
- determining whether an ion beam current is non-uniform based on the ion beam current measurements.
An ion beam current uniformity monitor comprising:
- an ion beam current measurer including a plurality of measuring devices for measuring a current of an ion beam at a plurality of locations;
- and
- a controller for maintaining ion beam current uniformity based on the ion beam current measurements by the ion beam current measurer.
The monitor of claim 22, wherein the controller uses a portion of the mutipixel dose array.
An ion implanter comprising:
- an ion source for generating an ion beam;
- a mass analyzer;
- an end station for holding a wafer to be implanted by the ion beam, the end station further including an ion beam current measurer including a plurality of measuring devices measuring a current of an ion beam at a plurality of locations;
- and
- a controller for determining a current uniformity of the ion beam based on measurements by the ion beam current measurer.
A program product stored on a computer-readable medium, which when executed, monitors ion beam current uniformity, the program product comprising:
- program code for receiving an ion beam current measurement prior to ion implanting at each of a plurality of locations within the ion beam;
- program code for directing ion implanting at least one wafer;
- program code for receiving periodical measurements of the ion beam current during ion implanting at each of the plurality of locations within the ion beam;
- and
- program code for determining whether an ion beam current is non-uniform based on the ion beam current measurements.
Dependencies are inferred from the claim text.