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US 2008/0073576 A1Published application
Deposition reduction system for an ion implanter
AssigneeAxcelis Technologies, Inc.
InventorsTeng-Chao Tao, Philip J. Ring
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AssigneeAxcelis Technologies, Inc.
InventorsTeng-Chao Tao, Philip J. Ring
Estimating the term…
A system for controlling the temperature of a semiconductor workpiece processing tool and surrounding structure, thereby reducing the deposition rates within an ion implanter. A faraday flag structure comprising a conductive strike plate coupled to a circuit for monitoring ions striking the strike plate to obtain an indication of the and a base supporting the strike plate that includes a thermally conductive material surrounding at least a portion of an outer perimeter of the strike plate. The faraday flag structure base defines a conduit for routing coolant through the thermally conductive material surrounding the strike plate. Positioned below the faraday flag is a thermally controlled cold trap that receives and retains foreign material appearing in ion implanter.
For use with a semiconductor processing tool having an evacuated region for treating a workpiece by directing an ion beam to strike a workpiece, apparatus comprising:
In a semiconductor processing assembly, a method of reducing and controlling contaminates within an ion implanter the assembly comprising:
A contaminate reduction structure comprising:
Dependencies are inferred from the claim text.