Stage for plasma processing apparatus, and plasma processing apparatus
OwnerAkira Koshiishi, Shinji Himori +1inventors
InventorsAkira Koshiishi, Shinji Himori, Shoichiro Matsuyama
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OwnerAkira Koshiishi, Shinji Himori +1inventors
InventorsAkira Koshiishi, Shinji Himori, Shoichiro Matsuyama
Estimating the term…
[Object] To provide a stage for plasma processing apparatus, the stage being capable of improving uniformity of electric field strength in a plasma so as to enhance an in-plane uniformity of a plasma process to a substrate, and to provide a plasma processing apparatus provided with this stage. [Means for Solving the Problem] A stage 1 for a plasma processing apparatus 2 comprises: a conductive member 21 serving as an electrode for generating a plasma or the like; a dielectric layer 22 covering a center part of an upper surface of the conductive member, for making uniform a radiofrequency electric field applied to a plasma through a substrate to be processed (wafer W); and an electrostatic chuck laminated on the dielectric layer 22, the electric chuck having a plurality of electrode films embedded therein, the electrode films being separated apart from each other in a radial direction of the stage to allow passage of a radiofrequency. An outer edge of the dielectric layer 22 is positioned right below or outside an inner edge of at least one separation area 23c of the separated electrode films 23b and 23d. The separated electrode films 23b and 23d are insulated to each other as to a radiofrequency.
A stage for a plasma processing apparatus, the stage being configured to place on a placing surface thereof a substrate to be processed, the stage comprising:
A stage for plasma processing apparatus, the stage being configured to place on a placing surface thereof a substrate to be processed, the stage comprising:
Dependencies are inferred from the claim text.