Method for Forming Carbonaceous Material Protrusion and Carbonaceous Material Protrusion

A method of forming one or more carbonaceous material projections, the method comprising the steps of:

• applying a resist onto a carbonaceous material substrate;
• forming holes in the applied resist, the holes being provided according to a predetermined arrangement, each hole having a wall surface, and the wall surface being inversely tapered from an aperture thereof toward a bottom thereof;
• depositing mask material for a mask on the carbonaceous material substrate to form a mask deposition in each hole;
• lifting off the mask material deposited on the resist together with the resist;
• and
• etching the carbonaceous material substrate by using the mask deposition as a mask to form one or more carbonaceous material projections.

A method of forming a carbonaceous material projection, the method comprising the steps of:

• forming a film on a carbonaceous material substrate, the film being made of one of a silicon-based nitride (SiNx:
• 0<x<1.33) and silicon-based nitride oxide (SiOxNy:
• 0<x<2, 0<y<1.3);
• applying a resist onto the film formed on the carbonaceous material substrate, patterning the resist by one of photolithography and electron beam exposure to form a patterned resist of a dot shape, and processing the film by use of the patterned resist as a mask;
• and
• etching the carbonaceous material substrate by use of an etching mask including the processed film to form a carbonaceous material projection.