Nitrogenated carbon electrode for chalcogenide device and method of making same
AssigneeOvonyx, Inc.
InventorJeffrey P. Fournier
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Abstract
A nitrogenated carbon electrode suitable for use in a chalcogenide device and method of making the same are described. The electrode comprises nitrogenated carbon and is in electrical communication with a chalcogenide material. The nitrogenated carbon material may be produced by combining nitrogen and vaporized carbon in a physical vapor deposition process.
Claims30
An electronic device, comprising:
- a phase-change material;
- and
- an electrode in electrical communication with said phase-change material, said electrode comprising nitrogenated carbon.
An electronic device, comprising:
- a chalcogenide material;
- and
- an electrode in electrical communication with said chalcogenide material, said electrode comprising nitrogenated carbon.
An electronic device, comprising:
- an S-type threshold switching material;
- and
- an electrode in electrical communication with said switching material, said electrode comprising nitrogenated carbon.
An electronic device, comprising:
- a programmable resistance material;
- and
- a nitrogenated carbon material in electrical communication with said programmable resistance material.
An electronic device, comprising:
- a chalcogenide material;
- and a nitrogenated carbon material in electrical communication with said chalcogenide material.
An electronic device, comprising:
- an S-type threshold switching material;
- and
- a nitrogenated carbon material in electrical communication with said first material.
An electronic device, comprising:
- a phase-change material;
- and
- a first material in communication with said phase-change material, said first material consisting essentially of carbon and nitrogen.
The device of claim 18, wherein the atomic percent of said carbon is greater than the atomic percent of said nitrogen.
The device of claim 18, wherein said first material comprises a carbon nitride material.
An electronic device, comprising:
- a chalcogenide material;
- and
- a first material in electrical communication with said chalcogenide material, said first material consisting essentially of carbon and nitrogen.
An electronic device, comprising:
- an S-type threshold switching material;
- and
- a first material in electrical communication with said switching material, said first material consisting essentially of carbon and nitrogen.
A method of making an electronic device, said method comprising:
- forming a nitrogenated carbon material;
- and
- forming a chalcogenide material, said chalcogenide material being in electrical communication with said nitrogenated carbon material.
Dependencies are inferred from the claim text.