A fabricating method of Single Electron Transistor (SET) by employing nano-lithographical technology in the semiconductor process with processing steps comprising:
- (a):
- First deposit the sealant, sealing material of gas molecule or atom state on the top-opening of the nano cylindrical pore, which having formed on the photo-resist of the substrate, so that the diameter of said top-opening gradually reduce to become a reduced nano-aperture, whose opening diameter is smaller than that of said top-opening;
- (b) Keep said substrate in horizontal direction, and align the deposit material of gas molecular or atom state to face perpendicularly towards the reduced nano-aperture so that the island electrode nano quantum dot with same diameter as that of reduced nano-aperture is directly deposited n at the expected position on the surface of said substrate of the nano cylindrical pore by means of said deposit material passing through said reduced nano-aperture;
- (c) Keep the output of the deposit material of gas molecular or atom state in the same direction as before, tilt said substrate rightwards into tilt angle with the reduced nano-aperture as center, the drain electrode nano quantum dot is deposited at the expected right position of said existing island electrode on the surface of said substrate by the deposit material passing through said reduced nano-aperture again;
- (d) Keep the output of the deposit material of gas molecular or atom state in the same direction as before, tilt said substrate leftwards into tilt angle with the reduced nano-aperture as center, the source electrode nano quantum dot is deposited at the expected left position of said existing island electrode on the surface of said substrate by the deposit material passing through said reduced nano-aperture again;
- (e) Keep the output of the deposit material of gas molecular or atom state in the same direction as before, rotate said substrate clockwise into rotation angle in coordination with tilt angle θ with said reduced nano-aperture as central axis, the gate electrode nano quantum dot is deposited at the expected front position of said existing island electrode on the surface of said substrate 1 by the deposit material passing through said reduced nano-aperture again;
- And
- (f) Finally, By means of solution rinsing (i.e. wet etching) or gas etching (i.e. dry etching), remove said nano cylindrical pore in said photo-resist on said substrate, thereby a Single Electron Transistor (SET) including island electrode nano quantum dot, drain electrode nano quantum dot, source electrode nano quantum dot and gate electrode nano quantum dot with nano-scale is directly fabricated on the surface of said substrate.