Process for the Production of Highly-Textured, Band-Shaped, High-Temperature Superconductors
AssigneeTrithor GmbH
InventorsMichael BACKER, Brigitte SCHLOBACH, Kerstin KNOTH, Barbara SCHUPP-NIEWA, Ruben HUHNE, Martina FALTER
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Abstract
The formation of band-shaped HTSL on a metal substrate is disclosed. The HTSL includes at least one buffer layer comprising zirconates and/or rare-earth oxides. The HTSL layer is formed on the buffer layer. The buffer layer has a texturing that in the case of a RHEED measurement results in discrete reflexes and not only in diffraction rings. In particular, the buffer layer may be textured along its interface with the HTSL layer.
Claims30
A method of producing band-shaped HTSL including a metal substrate, at least one buffer layer, and an HTSL that is located on the buffer layer, the method comprising:
- (a) providing a coating solution comprising a polar solvent with at least one free hydroxyl group;
- (b) applying the coating solution to the metal substrate;
- (c) drying the coating;
- (d) applying an annealing treatment to the coating to produce the buffer layer;
- and
- (e) applying the HTSL layer to the buffer layer.
A method of forming a band-shaped HTSL including a metal substrate, two buffer layers comprising La2Zr2O7, a buffer layer comprising gadolinium-doped cerium oxide, and at least one HTSL layer, the method comprising:
- (a) producing a first coating solution comprising lanthanum(III) 2,4-pentadionate and zirconium(IV) 2,4-pentadionate dissolved in propionic acid;
- (b) applying the first coating solution to the metal substrate;
- (c) drying the coating;
- (d) applying a first annealing treatment to form a first La2Zr2O7 buffer layer;
- (e) applying the first coating solution to the first buffer layer and drying coating;
- (f) applying a second annealing treatment to form a second La2Zr2O7 buffer layer;
- (g) producing a second coating solution comprising:
- cerium(III) acetylacetonate (CeO2) in 2-methoxylethanol, and
- Gd(III) acetylacetonate (Gd2O3) in propionic acid;
- (h) applying the second coating solution on the second La2Zr2O7 buffer layer and drying the second coating;
- (i) applying a third annealing treatment to form a third buffer layer comprising gadolinium-doped cerium oxide;
- and
- (j) applying the HTSL layer to the third buffer layer.
A method of forming band-shaped HTSL including a metal substrate, two buffer layers comprising La2Zr2O7, a buffer layer comprising cerium oxide, and at least one HTSL layer, the method comprising:
- (a) forming a first coating solution comprising lanthanum(III) 2,4-pentadionate and zirconium(IV) 2,4-pentadionate dissolved in propionic acid;
- (b) applying the first coating solution to the metal substrate and drying the coating;
- (c) applying an annealing treatment to form a first La2Zr2O7 buffer layer;
- (d) applying the first coating solution to the first La2Zr2O7 buffer layer and drying the coating;
- (e) applying a second annealing treatment to form a second La2Zr2O7 buffer layer;
- (f) forming a second coating solution comprising cerium(III) acetate dissolved in propionic acid, 2-propanol and acetyl acetone;
- (g) applying the second coating solution to the second La2Zr2O7 buffer layer and drying the coating;
- (h) applying a third annealing treatment to form a third buffer layer comprising cerium oxide;
- and
- (g) applying an HTSL layer on the third buffer layer.
Dependencies are inferred from the claim text.