Pattern generation method and charged particle beam writing apparatus
AssigneeNuFlare Technology, Inc.
InventorsKeiko Emi, Junichi Suzuki, Takayuki Abe
Life of this patent
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Abstract
A pattern generation method includes changing a dimension of a pattern included in each mesh-like region of a plurality of mesh-like regions by using an area of the pattern and a total sum of lengths of circumferential sides of the pattern included in each mesh-like region to correct a dimension error of the pattern, wherein the dimension error being caused by loading effects and the plurality of mesh-like regions being virtually divided from a pattern forming region of a target object, and generating a pattern of the dimension changed on the target object.
Claims11
A pattern generation method comprising:
- changing a dimension of a pattern included in each mesh-like region of a plurality of mesh-like regions by using an area of the pattern and a total sum of lengths of circumferential sides of the pattern included in each mesh-like region to correct a dimension error of the pattern, wherein the dimension error being caused by loading effects and the plurality of mesh-like regions being virtually divided from a pattern forming region of a target object;
- and
- generating a pattern of the dimension changed on the target object.
A pattern generation method comprising:
- changing a exposure dose of a charged particle beam by using an area of a pattern included in each mesh-like region of a plurality of mesh-like regions and a total sum of lengths of circumferential sides of the pattern to correct a dimension error of the pattern, wherein the dimension error being caused by loading effects and the plurality of mesh-like regions being virtually divided from a pattern forming region of a target object;
- and
- irradiating a charged particle beam at the exposure dose changed to form the pattern on the target object.
A charged particle beam writing apparatus comprising:
- a correcting unit configured to correct a exposure dose of a charged particle beam by using an area of a pattern included in each mesh-like region of a plurality of mesh-like regions and a total sum of lengths of circumferential sides of the pattern, wherein the plurality of mesh-like regions being virtually divided from a pattern forming region of a target object;
- and
- a pattern writing unit configured to write the pattern onto the target object by irradiating the charged particle beam at the corrected exposure dose.
Dependencies are inferred from the claim text.