Three-dimensional network for chemical mechanical polishing

A polishing pad useful for polishing at least one of a magnetic, optical and semiconductor substrate in the presence of a polishing medium, the polishing pad comprising:

• a) a three-dimensional network of interconnected unit cells, the interconnected unit cells having a height of at least ten unit cells, the interconnected unit cells being formed with linear polishing elements and the interconnected unit cells being reticulated for allowing fluid flow and removal of polishing debris;
• b) a plurality of the linear polishing elements forming the three-dimensional network of interconnected unit cells, the linear polishing elements having a first end connected to a first adjacent polishing element at a first junction and a second end connected to a second adjacent polishing element at a second junction and having a cross-sectional area that remains within 30% between the first and the second junctions;
• and
• c) a polishing surface formed from the plurality of polishing elements, the polishing surface having a surface area, measured in a plane parallel to the polishing surface, that remains consistent for multiple polishing operations.

A method of polishing at least one of a magnetic, optical and semiconductor substrate with a polishing pad in the presence of a polishing medium, comprising the steps of:

• creating dynamic contact between the polishing pad and the substrate to polish the substrate, the polishing pad comprising:
• a three-dimensional network of interconnected unit cells, the interconnected unit cells being reticulated for allowing fluid flow and removal of polishing debris;
• a plurality of polishing elements forming the three-dimensional network of interconnected unit cells, the interconnected unit cells having a height of at least ten unit cells, the polishing elements having a first end connected to a first adjacent polishing element at a first junction and a second end connected to a second adjacent polishing element at a second junction and having a cross-sectional area that remains within 30% between the first and the second junctions;
• a polishing surface formed from the plurality of polishing elements, the polishing surface having a surface area, measured in a plane parallel to the polishing surface, that remains consistent for multiple polishing operations;
• and
• trapping polishing debris in the polishing elements of the three-dimensional network.