Semiconductor device and method for manufacturing the semiconductor device
AssigneeOki Electric Industry Co., Ltd.
InventorYasuo Tanaka
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Abstract
A method is used for manufacturing a semiconductor device including a circuit-fabricated side on which an encapsulation layer is formed. The method includes the following steps. A semiconductor wafer is placed on the suction surface of a suction stage, the suction surface having a diameter in the range of 99 to 100.5% of a diameter of the semiconductor wafer. The semiconductor wafer is held on the suction surface of the suction stage by suction. A back surface of the semiconductor wafer is ground. The back surface of the semiconductor wafer is ground such that a surface roughness of the ground back surface is not greater than 5 nm. The encapsulation layer has a flexural modulus not smaller than 12 Gpa and not larger than 18 Gpa.
Claims3
A method for manufacturing a semiconductor device including a circuit-fabricated side on which an encapsulation layer is formed, the method comprising:
- placing a disc-shaped semiconductor wafer on a suction surface of a suction stage, the sucking area having a diameter in the range of 99 to 100.5% of a diameter of the semiconductor wafer;
- holding the semiconductor wafer on the suction surface of the suction stage by suction;
- and
- grinding a back surface of the semiconductor wafer.
Dependencies are inferred from the claim text.