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US 2007/0190809 A1Published application
Wafer processing method, semiconductor device manufacturing method, and wafer processing apparatus
AssigneeFujitsu Limited
InventorsKatsuto Tanahashi, Hiroshi Kaneta
Life of this patent
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Abstract
A wafer processing method is provided that includes the steps of heating a silicon wafer containing oxygen and irradiating an infrared ray having a wavelength within a range of 7-25 μm on the silicon wafer, and controlling formation of oxygen precipitates within the silicon wafer by selectively setting a heating temperature for heating the silicon wafer and an irradiation intensity of the infrared ray.
Claims12
A wafer processing method comprising the steps of:
- heating a silicon wafer containing oxygen and irradiating an infrared ray having a wavelength within a range of 7-25 μm on the silicon wafer;
- and
- controlling formation of oxygen precipitates within the silicon wafer by selectively setting a heating temperature for heating the silicon wafer and an irradiation intensity of the infrared ray.
A semiconductor device manufacturing method comprising the steps of:
- heating a silicon wafer containing oxygen and irradiating an infrared ray having a wavelength within a range of 7-25 μm on the silicon wafer;
- controlling formation of oxygen precipitates within a predetermined location of the silicon wafer by selectively setting a heating temperature for heating the silicon wafer and an irradiation intensity of the infrared ray;
- and
- forming a semiconductor element on the silicon wafer.
1 more element
A wafer processing apparatus comprising:
- an infrared ray irradiating source configured to irradiate an infrared ray;
- a heat processing chamber configured to heat a silicon wafer;
- a holding unit configured to hold the silicon wafer within the heat processing chamber;
- an entrance window through which the infrared ray enters the heat processing chamber, the entrance window being arranged at the heat processing chamber;
- and
- a control unit configured to adjust at least one of a heating temperature of the heat processing chamber and an irradiation intensity of the infrared ray, and control formation of oxygen precipitates within the silicon wafer.
3 more elements
Dependencies are inferred from the claim text.