Method for forming dielectric or metallic films
AssigneeL'Air Liquide, Societe Anonyme a Directoire et Conseil de Surveillance pour l'Etude et l'Exploitation des Procedes Georges Claude
InventorsAshutosh Misra, Matthew Fisher, Benjamin Jurcik, Christian Dussarrat, Eri Tsukada, Jean-Marc Girard
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Abstract
Method for producing a metal silicon (oxy)nitride by introducing a carbon-free silicon source (for example, (SiH3)3N), a metal precursor with the general formula MXn (for example, Hf(NEt2)4), and an oxidizing agent (for example, O2) into a CVD chamber and reacting same at the surface of a substrate. MsiN, MSIo and/or MSiON films may be obtained. These films are useful are useful as high k dielectrics films.
Claims19
1-18. (canceled)
A method for forming a MSiON or MSiO dielectric film comprising the steps of:
- a) vaporizing a metal source (M) to form a vaporized metal source;
- b) feeding a plurality of precursors to a deposition device, wherein said precursors comprise said vaporized metal source, a silicon source, an oxygen source, and a nitrogen source if MSiON is desired;
- and
- c) forming a dielectric film, wherein said dielectric film is formed with the desired final composition absent a post deposition step.
A method for forming a MSiN metallic film comprising the steps of:
- a) vaporizing a metal source to form a vaporized metal source;
- b) feeding a plurality of precursors to a deposition device, wherein said precursors comprise said vaporized metal source, a silicon source, and a nitrogen source;
- and
- c) forming a metallic film, wherein said metallic film is formed with the desired final composition absent a post deposition step.
The method of claim 10, wherein said metal source is selected from the group consisting of:
- a) a dialkylamino;
- and/or
- b) alkoxy ligands.
Dependencies are inferred from the claim text.