Minimizing low-k dielectric damage during plasma processing
AssigneeInfineon Technologies AG
InventorsMichael Beck, John Fitzsimmons, Karl Hornik, Darryl Restaino
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Abstract
Embodiments of the invention provide a semiconductor device having dielectric material and its method of manufacture. A method comprises a short (≦2 sec) flash activation of an ILD surface followed by flowing a precursor such as silane, DEMS, over the activated ILD surface. The precursor reacts with the activated ILD surface thereby selectively protecting the ILD surface. The protected ILD surface is resistant to plasma processing damage. The protected ILD surface eliminates the requirement of using a hard mask to protect a dielectric from plasma damage.
Claims20
A method of fabricating a semiconductor device, the method comprising:
- providing a substrate having active devices formed therein;
- forming a dielectric layer over the substrate;
- exposing a surface of the dielectric layer to a plasma, thereby forming a chemically reactive surface;
- turning off the plasma after forming the chemically reactive surface;
- and
- exposing the chemically reactive surface to a gaseous precursor after turning off the plasma, thereby reacting the gaseous precursor with chemically reactive surface.
A method of protecting a dielectric layer from plasma damage caused by a semiconductor manufacturing process, the method comprising:
- forming a dielectric layer over a substrate;
- exposing a surface of the dielectric layer to a plasma in a process chamber for less than about two seconds;
- shutting off the plasma;
- and
- flowing a gas comprising at least one of SiH4 and trimethylsilane (3MS) into the process chamber after shutting off the plasma.
A method of forming a capping layer on a conductor of a semiconductor device, the method comprising:
- providing an partially fabricated semiconductor device having a surface, the surface comprising an exposed conductor surface, and an exposed dielectric surface;
- forming an organosilane layer on the dielectric, wherein forming the organosilane layer comprises activating the exposed dielectric surface with a flash plasma process, shutting off the plasma, and flowing a silane over the activated dielectric surface after shutting off the plasma;
- cleaning the exposed conductor surface by exposing the partially fabricated semiconductor to a reducing plasma;
- and
- depositing a diffusion barrier layer on the organosilane layer and on the exposed conductor surface.
Dependencies are inferred from the claim text.