Method for manufacturing semiconductor device, substrate treater, and substrate treatment system
AssigneeTokyo Electron Limited
InventorsSHINTARO AOYAMA, Hiroshi Shinriki, Masanobu Igeta
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Abstract
A radical source is movably provided in a processing vessel holding a substrate, and the location or driving energy of the radical source is set such that the film formed on the substrate has a uniform thickness. Further, a radical source is provided at a first side of the substrate and a radical flow is formed such that the radical flow flows from the first side of the substrate surface to the other side. By optimizing the condition of the radical flow, the film formed on the substrate has a uniform thickness.
Claims23
A method of fabricating a semiconductor device having a structure in which an oxide film and a high-K dielectric gate insulation film are laminated on a substrate, said method comprising:
- supplying a process gas containing oxygen to a surface of said substrate;
- activating said process gas by irradiating said surface of said substrate with ultraviolet radiation from an ultraviolet source;
- and
- moving said substrate and said ultraviolet source relative to each other,
- wherein said step of activating said process gas drives said ultraviolet source with an energy set such that a film thickness variation of said oxide film on said surface of said substrate is minimized.
A method of forming an insulation film on a substrate, comprising:
- supplying a process gas to one or more radical sources;
- forming active radicals form said process gas in each of said one or more radical sources;
- supplying said active radicals to a substrate surface;
- and
- forming an insulation film by a reaction of said active radicals on said substrate surface,
- said step of forming said active radicals being conducted while changing a state of each of said one or more radical sources,
- said method further comprising the steps of:
- obtaining an optimum state in which a variation of film state within said insulation film is minimized for each of said one or more radical sources based on said state of said insulation film;
- and
- forming an insulation film on said substrate surface by setting each of said one or more radical sources to said optimum state,
- wherein said step of changing the state of said one or more radical sources comprises displacing a location of said one or more radical sources relative to said substrate.
A substrate processing method, comprising:
- rotating a substrate in a processing chamber in which said substrate is held;
- forming a radical flow in said processing chamber such that said radical flow flows from a first side to a second side along a surface of said substrate;
- and
- processing said surface of said substrate by said radical flow,
- said step of forming said radical flow comprises supplying radicals under a condition such that said radicals are substantially annihilated before they reach a second side across a central part of said substrate.
Dependencies are inferred from the claim text.