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AssigneeSekesui Chemical Co., Ltd.
InventorsNorifumi Fujimura, Ryoma Hayakawa, Hiroya Kitahata, Tsuyoshi Uehara, Takuya Yara
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Uniform oxynitride and nitride films can be formed by low-temperature and high-speed nitriding reaction not dependent on the nitriding time or nitriding temperature. A solid dielectric is provided on at least one of opposed surfaces of a pair of electrodes opposed to each other under a pressure of 300 (Torr) or higher, a nitrogen gas containing an oxide equal to or lower than 0.2% is introduced into a space between the pair of opposed electrodes, an electric field is applied to the nitrogen gas, and the resulting N2 (2nd p.s.) or N2 (H.I.R) active species is brought into contact with an object to be processed to form an oxynitride film/nitride film on a surface of the object to be processed.
A method for forming an oxynitride film, characterized by comprising providing a solid dielectric on at least one of opposed surfaces of a pair of electrodes opposed to each other under nearly atmospheric pressure, introducing a nitrogen gas containing oxygen or an oxide at higher than 1 ppm and equal to or lower than 0.2% into a space between the pair of opposed electrodes, applying an electric field to the nitrogen gas, and bringing the resulting plasma into contact with an object to be processed to form an oxynitride film on a surface of the object to be processed.
A method for forming a nitride film, characterized by comprising providing a solid dielectric on at least one of opposed surfaces of a pair of electrodes opposed to each other under nearly atmospheric pressure, introducing a nitrogen gas containing oxygen or an oxide at equal to or lower than 1 ppm into a space between the pair of opposed electrodes, applying an electric field to the nitrogen gas, and bringing the resulting plasma into contact with an object to be processed to form a nitride film on a surface of the object to be processed.
An oxynitride film formed on a surface of an object to be processed by applying an electric field to a nitrogen gas containing oxygen or an oxide at higher than 1 ppm and equal to or lower than 0.2%, and bringing the object to be processed into contact with the resulting plasma.
A nitride film formed on a surface of an object to be processed by applying an electric field to a nitrogen gas containing oxygen or an oxide at equal to or lower than 1 ppm, more preferably equal to or lower than 1 ppb, and bringing the object to be processed into contact with the resulting plasma.
A substrate having on its surface an oxynitride film formed by applying an electric field to a nitrogen gas containing oxygen or an oxide at higher than 1 ppm and equal to or lower than 0.2%, and bringing an object to be processed into contact with the resulting plasma.
A substrate having on its surface a nitride film formed by applying an electric field to a high-purity nitrogen gas containing oxygen or an oxide at equal to or lower than 1 ppm, more preferably equal to or lower than 1 ppb, and bringing an object to be processed into contact with the resulting plasma.
An apparatus for forming a nitride film and an oxynitride film, characterized by comprising a pair of opposed electrodes with a solid dielectric containing no oxide being provided on at least one of opposed surfaces;
Dependencies are inferred from the claim text.