Low-k dielectric material
AssigneeSilecs Oy
InventorJuha Rantala
Life of this patent
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Abstract
Method for forming a low dielectric constant structure on a semiconductor substrate by CVD processing. The method comprises using a precursor containing chemical compound having the formula of (R1—R2)n-Si—(X1)4-n, wherein X1 is hydrogen, halogen, acyloxy, alkoxy or OH group, R2 is an optional group and comprises an aromatic group having 6 carbon atoms and R1 is a substituent at position 4 of R2 selected from an alkyl group having from 1 to 4 carbon atoms, an alkenyl group having from 2 to 5 carbon atoms, an alkynyl group having from 2 to 5 carbon atoms, Cl or F; n is an integer 1-3. The present precursors allow for a lowering of the electronic dielectric constant compared to conventional dielectric materials, such as silicon dioxide or phenyl modified organo-containing silicon dioxide.
Claims11
A method for forming a low dielectric constant structure on a semiconductor substrate by CVD processing, comprising the steps of:
- introducing a material gas into a reaction chamber for CVD processing, wherein a semiconductor substrate is placed, said material gas comprising a silicon-containing chemical compound having the formula of
- (R1—R2)n—Si—(X1)4−n,
- wherein
- X1 is hydrogen, halogen, acyloxy, alkoxy or OH group,
- R2 is an optional group and comprises an aromatic group having 5 to 7 carbon atoms, and
- R1 is a substituent at position 4 of R2 or a group directly linked to Si, selected from hydrocarbyl groups having from 1 to 30 carbons;
- n is an integer 1-3;
- and
- forming a silicone polymer film on the semiconductor substrate by activating a polymerization reaction in the reaction chamber where the material gas is present until the relative dielectric constant of the silicone polymer film is lower than a predetermined value.
2-16. (canceled)
A poly(organo siloxane) compound formed via CVD process comprising a repeating Si—O backbone, carbon chain crosslinking groups and —R1—R2 bound to from 5% to 60% of the silicon atoms in the Si—O backbone, wherein R2 is an aromatic group having 6 carbon atoms and R1 is a substituent at position 4 of R2.
18-34. (canceled)
A poly(organo siloxane) compound formed via the CVD method comprising a repeating Si—O backbone, —R1—R2 bound to from 25% to 60% of the silicon atoms in the Si—O backbone, wherein R2 is an aromatic group having 6 carbon atoms and R1 is a substituent at position 4 of R2 or a group directly linked to Si, and R3 is bound to from 5% to 60% of the silicon atoms, wherein R3 is an alkenyl group having from 2 to 5 carbon atoms, acrylic group or epoxy group.
36-50. (canceled)
An integrated circuit having a layer with areas of an electrically conductive first material and an electrically insulating second material, wherein the second material is a poly(organo siloxane) compound deposited via CVD method comprising a repeating Si—O backbone, carbon chain crosslinking groups and —R1 —R2 bound to from 5% to 60% of the silicon atoms in the Si—O backbone, wherein R2 is an aromatic group having 6 carbon atoms and R1 is a substituent at position 4 of R2.
52-61. (canceled)
A computer comprising an integrated circuit having a layer with areas of an electrically conductive first material and an electrically insulating second material, wherein the second material is a poly(organo siloxane) compound deposited via CVD method comprising a repeating Si—O backbone, carbon chain crosslinking groups and —R1—R2 bound to from 5% to 60% of the silicon atoms in the Si—O backbone, wherein R2 is an aromatic group having 6 carbon atoms and R1 is a substituent at position 4 of R2.
A method for making an integrated circuit, comprising providing alternating areas of electrically insulating and electrically conducting materials within a layer on a semiconductor substrate, wherein the electrically insulating material comprises a poly(organo siloxane) compound deposited via CVD method comprising a repeating Si—O backbone, carbon chain crosslinking groups and —R1—R2 bound to from 5% to 60% of the silicon atoms in the Si—O backbone, wherein R2 is an aromatic group having 6 carbon atoms and R1 is a substituent at position 4 of R2 selected from an alkyl chain having from 1 to 4 carbons, an alkenyl group having from 2 to 6 carbons or OH.
64-66. (canceled)
Dependencies are inferred from the claim text.