Removing a low-k dielectric layer from a wafer by chemical mechanical polishing
AssigneeApplied Materials, Inc.
InventorsHong Wang, Krishna Vepa, Paul Miller
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Abstract
A low-k dielectric layer having a k value of less than about 3 and comprising silicon, oxygen and carbon, is removed from a wafer. In the method, the wafer is chemical mechanical polished by rotating the surface of the wafer against a polishing pad having a hardness of at least about 40 JIS A, while applying a polishing slurry between the wafer and the polishing pad.
Claims20
A method of removing a low-k dielectric layer from a wafer, the low-k dielectric layer having a k value of less than about 3 and comprising silicon, oxygen and carbon, the method comprising:
- chemical mechanical polishing the wafer by:
- (a) rotating the surface of the wafer against a polishing pad having a hardness of at least about 40 JIS A;
- and
- (b) applying a polishing slurry between the wafer and the polishing pad.
A method of removing a low-k dielectric layer from a wafer, the low-k dielectric layer having a k value of less than about 3 and comprising silicon, oxygen and carbon, the method comprising:
- (a) chemical mechanical polishing the wafer by:
- (i) rotating the surface of the wafer against a polishing pad having a hardness of at least about 40 JIS A;
- and
- (ii) applying a polishing slurry between the wafer and the polishing pad, the polishing slurry comprising slurry particles of silica in solution comprising KOH.
Dependencies are inferred from the claim text.