Fine grinding a low-k dielectric layer off a wafer
AssigneeApplied Materials, Inc.
InventorsHong Wang, Krishna Vepa, Paul Miller
Life of this patent
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Abstract
A low-k dielectric layer is removed from a wafer to refresh the wafer. The low-k dielectric layer has a k value of less than about 3 and comprises silicon, oxygen and carbon. The method comprises fine grinding the low-k dielectric layer with a grinding surface comprising bonded particles of abrasive material having a size of from about 1 to about 6 micrometers. Thereafter, the wafer can be polished by chemical mechanical polishing.
Claims23
A method of removing a low-k dielectric layer from a wafer, the low-k dielectric layer having a k value of less than about 3 and comprising silicon, oxygen and carbon, the method comprising:
- (a) fine grinding the low-k dielectric layer with a grinding surface comprising bonded particles of abrasive material having a size of from about 1 to about 6 micrometers;
- and
- (b) polishing the wafer.
A method of removing a low-k dielectric layer from a wafer, the low-k dielectric layer having a k value of less than about 3 and comprising silicon, oxygen and carbon, the method comprising:
- (a) fine grinding the low-k dielectric layer with a grinding surface comprising bonded particles of abrasive material (i) comprising diamond or cubic boron nitride, and (ii) having a size of from about 1 micrometer to about 6 micrometers;
- and
- (b) polishing the wafer by chemical mechanical polishing.
A method of removing a low-k dielectric layer from a wafer, the low- k dielectric layer having a k value of less than about 3 and comprising silicon, oxygen and carbon, and the method comprising:
- (a) fine grinding the low-k dielectric layer with a grinding surface comprising bonded particles of abrasive material (i) comprising diamond or cubic boron nitride, and (ii) having a size of from about 1 micrometer to about 6 micrometers;
- and
- (b) polishing the wafer by rotating the surface of the wafer against a polishing pad having a hardness of at least about 40 while applying a polishing slurry between the wafer and polishing pad.
Dependencies are inferred from the claim text.