Compositions and methods for CMP of indium tin oxide surfaces
OwnerPhillip Carter, Nevin Naguib +1inventors
InventorsPhillip Carter, Nevin Naguib, Fred Sun
Life of this patent
Estimating the term…
Abstract
The present invention provides chemical-mechanical polishing (CMP) compositions and methods for polishing an ITO surface. The compositions of the invention comprise a particulate zirconium oxide or colloidal silica abrasive, which has a mean particle size of not more than about 150 nm, suspended in an aqueous carrier, which preferably has a pH of not more than about 5. Preferably, the abrasive has a surface area in the range of about 40 to about 220 m2/g. The CMP compositions of the invention provide an acceptably low surface roughness when used to polish an ITO surface, providing clean and uniform surfaces.
Claims14
A chemical-mechanical polishing (CMP) composition for polishing an indium tin oxide (ITO) surface, the composition comprising a particulate zirconium oxide or colloidal silica abrasive having a particle size of not more than about 150 nm, dispersed in an aqueous carrier.
A chemical-mechanical polishing (CMP) composition for polishing an indium tin oxide (ITO) surface, the composition comprising a particulate zirconium oxide abrasive having a particle size of not more than about 150 nm and a surface area in the range of about 40 to about 75 cm2/g, dispersed in an aqueous carrier.
A chemical-mechanical polishing (CMP) composition for polishing an indium tin oxide (ITO) surface, the composition comprising a particulate colloidal silica abrasive having a particle size in the range of about 20 to about 140 nm dispersed in an aqueous carrier.
Dependencies are inferred from the claim text.