US 2007/0190780 A1 · ATOMIC LAYER DEPOSITION OF BARRIER MATERIALS

Abstract

Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate including depositing a metal nitride barrier layer on at least a portion of a substrate surface by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a nitrogen containing compound and depositing a metal barrier layer on at least a portion of the metal nitride barrier layer by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a reductant. A soak process may be performed on the substrate surface before deposition of the metal nitride barrier layer and/or metal barrier layer.

Claims42

Dependent claims

A method for forming metal interconnect structures on a substrate surface, comprising:

exposing a substrate to tungsten hexafluoride and a reducing gas to form an initiation layer on the substrate during a soak process;
depositing a barrier layer comprising tungsten nitride on the substrate during a first atomic layer deposition process;
exposing the barrier layer to a first processing gas comprising silane or diborane prior to depositing a tungsten-containing layer;
depositing the tungsten-containing layer on the barrier layer during a second atomic layer deposition process;
exposing the tungsten-containing layer to a second processing gas comprising silane or diborane prior to depositing a bulk metal layer comprising tungsten;
and
depositing the bulk metal layer comprising tungsten on the substrate during a chemical vapor deposition process.

4 more elements

Dependencies are inferred from the claim text.

Atomic layer deposition of barrier materials

Life of this patent

Atomic layer deposition of barrier materials

Life of this patent

Abstract

Claims42