Method of making dense, conformal, ultra-thin cap layers for nanoporous low-k ild by plasma assisted atomic layer deposition
AssigneeStc.Unm
InventorsYing Bing Jiang, Joseph L. Cecchi, C. Jeffrey Brinker
Life of this patent
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AssigneeStc.Unm
InventorsYing Bing Jiang, Joseph L. Cecchi, C. Jeffrey Brinker
Estimating the term…
Barrier layers and methods for forming barrier layers on a porous layer are provided. The methods can include chemically adsorbing a plurality of first molecules on a surface of the porous layer in a chamber and forming a first layer of the first molecules on the surface of the porous layer. A plasma can then be used to react a plurality of second molecules with the first layer of first molecules to form a first layer of a barrier layer. The barrier layers can seal the pores of the porous material, function as a diffusion barrier, be conformal, and/or have a negligible impact on the overall ILD k value of the porous material.
A method for forming a barrier layer on a porous material comprising:
A method for forming a barrier layer on a porous material comprising:
A semiconductor device comprising:
A method for adjusting a pore size on a porous material comprising:
Dependencies are inferred from the claim text.