Post-cmp treating liquid and manufacturing method of semiconductor device using the same
AssigneeKabushiki Kaisha Toshiba
InventorsNobuyuki Kurashima, Gaku Minamihaba, Hiroyuki Yano
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Abstract
A post CMP treating liquid is provided, which includes water, resin particles having, on their surfaces, carboxylic group and sulfonyl group, and a primary particle diameter ranging from 10 to 60 nm, a first surfactant having carboxylic group, a second surfactant having sulfonyl group, and tetramethyl ammonium hydroxide. The resin particles are incorporated at a concentration ranging from 0.01 to 1 wt %. The treating liquid has a pH ranging from 4 to 9, and exhibits a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.
Claims20
A post-CMP treating liquid comprising:
- water;
- resin particles having, on their surfaces, carboxylic group and sulfonyl group, and a primary particle diameter ranging from 10 to 60 nm, the resin particles being incorporated at a concentration ranging from 0.01 to 1 wt %;
- a first surfactant having carboxylic group;
- a second surfactant having sulfonyl group;
- and
- tetramethyl ammonium hydroxide;
- the treating liquid having a pH ranging from 4 to 9 and exhibiting a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.
A method for manufacturing a semiconductor device comprising:
- depositing a conductive material above an insulating film formed above a semiconductor substrate and having a recess, thereby forming a conductive film;
- polishing the conductive film to expose a surface of the insulating film while burying the conductive material in the recess, thereby forming a buried wiring layer;
- and
- treating a surface of the buried wiring layer and the surface of the insulating film using a treating liquid without substantially polishing these surfaces, the treating liquid comprising water;
- resin particles having, on their surfaces, carboxylic group and sulfonyl group, and a primary particle diameter ranging from 10 to 60 nm, the resin particles being incorporated at a concentration ranging from 0.01 to 1 wt %;
- a first surfactant having carboxylic group;
- a second surfactant having sulfonyl group;
- and tetramethyl ammonium hydroxide;
- the treating liquid having a pH ranging from 4 to 9.
Dependencies are inferred from the claim text.