Method for forming low dielectric constant fluorine-doped layers

A method for forming a dielectric layer comprising:

• providing a semiconductor substrate with a surface region, the surface region including one or more layers overlying the semiconductor substrate;
• introducing the semiconductor substrate into a processing chamber;
• providing one or more precursors into the processing chamber, at least one of the one or more precursors including fluorine;
• forming a plasma within the processing chamber, the plasma causing a chemical reaction using the one or more precursors on the surface region of the semiconductor substrate;
• and
• removing the semiconductor substrate from the processing chamber,
• wherein:
• the chemical reaction causes the formation of a dielectric layer on the surface region of the semiconductor substrate, and
• the dielectric layer is associated with a dielectric constant equal or less than 3.3.

A method for forming a SiOCF layer comprising:

• providing a semiconductor substrate with a surface region, the surface region including one or more layers overlying the semiconductor substrate;
• introducing the semiconductor substrate into a processing chamber;
• providing one or more precursors into the processing chamber, at least one of the one or more precursors including fluorine;
• forming a plasma within the processing chamber, the plasma causing a chemical reaction using the one or more precursors on the surface region of the semiconductor substrate;
• and
• removing the semiconductor substrate from the processing chamber,
• wherein:
• the chemical reaction causes the formation of a SiOCF layer on the surface region of the semiconductor substrate, and
• the SiOCF layer is associated with a dielectric constant equal or less than 3.3.