Manufacturing method of semiconductor device
OwnerMotoyuki Sato, Tomonori Aoyamainventors
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Abstract
A method of manufacturing a semiconductor device, includes forming a gate insulating film on a semiconductor substrate, and forming a gate electrode on the gate insulting film, wherein forming the gate insulating film includes forming a metal silicate film, and a silicon source used for forming the metal silicate film includes at least one of a first hydrocarbon silicon compound obtained by replacing at least one of hydrogen atoms in monosilane with an alkyl group, a second hydrocarbon silicon compound obtained by replacing at least one of hydrogen atoms in disilane with an alkyl group, and a third hydrocarbon silicon compound obtained by replacing at least one of hydrogen atoms in trisilane with an alkyl group.
Claims17
A method of manufacturing a semiconductor device, comprising:
- forming a gate insulating film on a semiconductor substrate;
- and
- forming a gate electrode on the gate insulting film,
- wherein forming the gate insulating film includes forming a metal silicate film, and
- a silicon source used for forming the metal silicate film includes at least one of a first hydrocarbon silicon compound obtained by replacing at least one of hydrogen atoms in monosilane with an alkyl group, a second hydrocarbon silicon compound obtained by replacing at least one of hydrogen atoms in disilane with an alkyl group, and a third hydrocarbon silicon compound obtained by replacing at least one of hydrogen atoms in trisilane with an alkyl group.
A method of manufacturing a semiconductor device, comprising:
- forming a gate insulating film on a semiconductor substrate;
- and
- forming a gate electrode on the gate insulting film,
- wherein forming the gate electrode includes forming a metal silicide film, and
- a silicon source used for forming the metal silicide film includes at least one of a first hydrocarbon silicon compound obtained by replacing at least one of hydrogen atoms in monosilane with an alkyl group, a second hydrocarbon silicon compound obtained by replacing at least one of hydrogen atoms in disilane with an alkyl group, and a third hydrocarbon silicon compound obtained by replacing at least one of hydrogen atoms in trisilane with an alkyl group.
Dependencies are inferred from the claim text.