METHOD FOR CONDUCTIVITY CONTROL OF (Al,In,Ga,B)N
AssigneeThe Regents of the University of California
InventorsJohn Kaeding, Hitoshi Sato, Michael Iza, Hirokuni Asamizu, Hong Zhong, Steven DenBaars, Shuji Nakamura
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Abstract
A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the <011> direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.
Claims19
A method for enhancing or tailoring conductivity properties in a nitride device or semiconductor nitride comprising:
- (a) fabricating the nitride device or semiconductor nitride using a doped semipolar or nonpolar nitride semiconductor for enhancing or tailoring the conductivity properties of the nitride device or semiconductor nitride.
A method for growing device quality semipolar or nonpolar nitride, comprising:
- (a) controlling conductivity of the semipolar or nonpolar nitride semiconductor by varying a miscut angle of a miscut substrate;
- and
- (b) depositing the semipolar or nonpolar nitride semiconductor on the miscut substrate.
A semipolar or nonpolar nitride semiconductor incorporating one or more dopants for modulating the semipolar or nonpolar nitride semiconductor's conductivity.
Dependencies are inferred from the claim text.