Vapor phase growth method
AssigneeNippon Mining & Metals Co., Ltd.
InventorsMasashi Nakamura, Suguru Oota, Ryuichi Hirano
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Abstract
It is to provide a vapor phase growth method in which an epitaxial layer consisting of a compound semiconductor such as InAlAs, can be grown, with superior reproducibility, on a semiconductor substrate such as Fe-doped InP. In vapor phase growth method for growing an epitaxial layer on a semiconductor substrate, a resistivity of the semiconductor substrate at a room temperature is previously measured, a set temperature of the substrate is controlled depending on the resistivity at the room temperature such that a surface temperature of the substrate is a desired temperature regardless of the resistivity of the semiconductor substrate, and the epitaxial layer is grown.
Claims5
A vapor phase growth method for growing an epitaxial layer on a semiconductor substrate, comprising:
- previously measuring a resistivity of the semiconductor substrate at a room temperature;
- controlling a set temperature of the substrate depending on the resistivity at the room temperature such that a surface temperature of the substrate is a desired temperature regardless of the resistivity of the semiconductor substrate;
- and growing the epitaxial layer.
Dependencies are inferred from the claim text.