Substrate for growing Pendeo epitaxy and method of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsHo-sun Paek, Tae-hoon Jang, Youn-Joon Sung, Tan Sakong, Min-ho Yang
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Abstract
A Pendeo-epitaxy growth substrate and a method of manufacturing the same are provided. The Pendeo-epitaxy growth substrate includes a substrate, a plurality of pattern areas formed on the substrate in a first direction for Pendeo-epitaxy growth, and at least one solution blocking layer contacting the plurality of pattern areas and formed on the substrate in a second direction, thereby preventing contamination of a semiconductor device due to air gaps and reducing the percentage defects of the semiconductor device during a Pendeo-epitaxy growth process.
Claims12
A Pendeo-epitaxy growth substrate comprising:
- a substrate;
- a plurality of pattern areas formed on the substrate in a first direction for Pendeo-epitaxy growth;
- and
- at least one solution blocking layer contacting the plurality of pattern areas and formed on the substrate in a second direction.
A method of forming a Pendeo-epitaxy growth substrate, the method comprising:
- coating group III nitrides on a substrate and forming a nitride layer;
- disposing a mask having openings corresponding to a plurality of pattern areas formed on the substrate in a first direction for Pendeo-epitaxy growth and at least one solution blocking layer contacting the plurality of pattern areas and formed on the substrate in a second direction on the nitride layer;
- and
- etching the nitride layer excluding the pattern areas and the solution blocking layer and removing the etched nitride layer.
Dependencies are inferred from the claim text.