Forming of a single-crystal semiconductor layer portion separated from a substrate
AssigneeSTMicroelectronics S.r.l.
InventorsDidier Dutartre, Nicolas Loubet, Alexandre Talbot
Life of this patent
Estimating the term…
Abstract
A method for forming a single-crystal semiconductor layer portion above a hollowed area, including growing by selective epitaxy on an active single-crystal semiconductor region a sacrificial single-crystal semiconductor layer and a single-crystal semiconductor layer, and removing the sacrificial layer. The epitaxial growth is performed while the active region is surrounded with a raised insulating layer and the removal of the sacrificial single-crystal semiconductor layer is performed through an access resulting from an at least partial removal of the raised insulating layer.
Claims12
A method for forming a single-crystal semiconductor layer portion above a hollowed area, comprising:
- growing by selective epitaxy, on an active single-crystal semiconductor region, a sacrificial single-crystal semiconductor layer and a single-crystal semiconductor layer
- removing the sacrificial single-crystal semiconductor layer,
- wherein the epitaxial growth is performed while the active region is surrounded with a raised insulating layer and the removal of the sacrificial single-crystal semiconductor layer is performed through an access resulting from an at least partial removal of the raised insulating layer.
A method for forming a MOS transistor, comprising forming a transistor channel by forming a single-crystal semiconductor layer portion above a hollowed area, comprising:
- growing by selective epitaxy, on an active single-crystal semiconductor region, a sacrificial single-crystal semiconductor layer and a single-crystal semiconductor layer
- removing the sacrificial single-crystal semiconductor layer,
- wherein the epitaxial growth is performed while the active region is surrounded with a raised insulating layer and the removal of the sacrificial single-crystal semiconductor layer is performed through an access resulting from an at least partial removal of the raised insulating layer.
Dependencies are inferred from the claim text.