Method to restore hydrophobicity in dielectric films and materials
AssigneeHoneywell International Inc.
InventorsNigel Hacker, Michael Thomas, James Drage
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Abstract
Silica dielectric films, whether nanoporous foamed silica dielectrics or nonporous silica dielectrics are readily damaged by fabrication methods and reagents that reduce or remove hydrophobic properties from the dielectric surface. The invention provides for methods of imparting hydrophobic properties to such damaged silica dielectric films present on a substrate. The invention also provides plasma-based methods for imparting hydrophobicity to both new and damaged silica dielectric films. Semiconductor devices prepared by the inventive processes are also provided.
Claims39
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The method of claim 23 wherein the surface modification composition comprises at least one compound having a formula selected from the group consisting of:
- R3SiNHSiR3, RxSiCly, RxSi(OH)y R3SiOSiR3, RxSi(OR)y, MpSi(OH)[4−p], RxSi(OCOCH3)y and combinations thereof,
- wherein x is an integer ranging from 1 to 3,
- y is an integer ranging from 1 to 3 such that y=4−x,
- p is an integer ranging from 2 to 3;
- each R is an independently selected from hydrogen and a hydrophobic organic moiety;
- each M is an independently selected hydrophobic organic moiety;
- and
- R and M can be the same or different.
The method of claim 23 wherein the surface modification composition comprises at least a compound selected from the group consisting of, acetoxytrimethylsilane, acetoxysilane, diacetoxydimethylsilane, methyltriacetoxysilane, phenyltriacetoxysilane, diphenyldiacetoxysilane, methyltriethoxysilane, dimethyldiethoxysilane, trimethylethoxysilane, methyltrimethoxysilane, dimethyldimethoxysilane, trimethylmethoxysilane, methyltrichlorosilane, dimethyldichlorosilane, trimethylchlorsilane, methylsilane, dimethylsilane, trimethylsilane, hexamethyldisilazane, 2-trimethylsiloxypent-2-ene-4-one, n-(trimethylsilyl)acetamide, 2-(trimethylsilyl)acetic acid, n-(trimethylsilyl)imidazole, trimethylsilylpropiolate, trimethylsilyl(trimethylsiloxy)-acetate, nonamethyltrisilazane, hexamethyldisiloxane, trimethylsilanol, triethylsilanol, triphenylsilanol, t-butyldimethylsilanol, diphenylsilanediol, trimethoxysilane, triethoxysilane, trichlorosilane, and combinations thereof.
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The method of claim 23 wherein the silica dielectric film is a methylhydridosiloxane film.
The method of claim 23 wherein the surface modification composition comprises a solvent selected from the group consisting of ketones, ethers, esters, hydrocarbons, and combinations thereof.
The method of claim 24 wherein the etchant is a plasma comprising atoms, ions and/or radicals selected from the group consisting of oxygen, fluorine, hydrogen, nitrogen and combinations thereof.
The method of claim 24 wherein the etchant is a wet etchant that comprises at least one agent selected from the group consisting of:
- an amide, an alcohol, an alcoholamine, an amine, a triamine, an acid, a base and combinations thereof.
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The method of claim 30 wherein a plasma derived from a silane compound is used as the surface modification composition.
The method of claim 30 wherein the surface modification composition is a plasma derived from a compound selected from the group consisting of a hydrocarbon, an aldehyde, an ester, an ether, and combinations thereof.
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A semiconductor device produced by the method of claim 23.
A method of treating a damaged silica dielectric film present on a substrate, wherein a dielectric film has been damaged by at least one of increasing its dielectric constant, increasing its silanol content, or reducing its organic content, the method comprising contacting the damaged silica dielectric film with a surface modification composition to effect one or more of (i), (ii), and (iii):
- (i) decreasing the dielectric constant of the damaged silica dielectric film;
- (ii) decreasing the silanol content of the damaged silica dielectric film;
- (iii) increasing the organic content of the damaged silica dielectric film.
Dependencies are inferred from the claim text.