Methods of forming semiconductor devices including fin structures
AssigneeSamsung Electronics Co., Ltd.
InventorsDeok-Hyung Lee, Si-Young Choi, Byeong-Chan Lee, Yong-Hoon Son, In-Soo Jung
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Abstract
A method of forming a semiconductor device may include forming a fin structure extending from a substrate. The fin structure may include first and second source/drain regions and a channel region therebetween, and the first and second source/drain regions may extend a greater distance from the substrate than the channel region. A gate insulating layer may be formed on the channel region, and a gate electrode may be formed on the gate insulating layer so that the gate insulating layer is between the gate electrode and the channel region. Related devices are also discussed.
Claims25
A method of forming a semiconductor device, the method comprising:
- forming a fin structure extending from a substrate, the fin structure including first and second source/drain regions and a channel region therebetween, wherein the first and second source/drain regions extend a greater distance from the substrate than the channel region;
- forming a gate insulating layer on the channel region;
- and
- forming a gate electrode on the gate insulating layer so that the gate insulating layer is between the gate electrode and the channel region.
Dependencies are inferred from the claim text.