Semiconductor device and method for incorporating a halogen in a dielectric
OwnerTien Luo, Olubunmi Adetutu +2inventors
InventorsTien Luo, Olubunmi Adetutu, Eric Luckowski, Narayanan Ramani
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Abstract
A method of forming a semiconductor device, the method includes forming a gate dielectric over the semiconductor substrate, exposing the gate dielectric to a halogen, and incorporating the halogen into the gate dielectric. In one embodiment, the halogen is fluorine. In one embodiment, the gate dielectric is also exposed to nitrogen and the nitrogen is incorporated into the gate dielectric. In one embodiment, the gate dielectric is a metal oxide.
Claims20
A method of forming a semiconductor device, the method comprising:
- providing a semiconductor substrate;
- forming a gate dielectric over the semiconductor substrate;
- exposing the gate dielectric to a plasma comprising a halogen;
- incorporating the halogen into the gate dielectric;
- forming a gate electrode over the gate dielectric;
- and
- forming current electrode regions adjacent the gate electrode.
A method for forming a semiconductor device, the method comprising:
- providing a semiconductor substrate;
- forming a gate dielectric over the semiconductor substrate;
- incorporating a halogen into the gate dielectric;
- incorporating nitrogen into the gate dielectric;
- forming a gate electrode over the gate dielectric;
- and
- forming current electrode regions adjacent the gate electrode.
A semiconductor device comprising:
- a semiconductor substrate;
- a gate dielectric over the semiconductor substrate, wherein the gate dielectric comprises a halogen and nitrogen;
- a gate electrode over the gate dielectric;
- and
- current electrode regions adjacent the gate electrode.
Dependencies are inferred from the claim text.