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US 2007/0190710 A1Published application
Laser Annealing Method
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsNaoto Kusumoto, Koichiro Tanaka
Life of this patent
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Abstract
In crystallizing an amorphous silicon film by illuminating it with linear pulse laser beams having a normal--distribution type beam profile or a similar beam profile, the linear pulse laser beams are applied in an overlapped manner. There can be obtained effects similar to those as obtained by a method in which the laser illumination power is gradually increased and then decreased in a step-like manner in plural scans.
Claims23
A method of manufacturing a semiconductor device comprising:
- forming a semiconductor film over a substrate;
- emitting a pulse laser light at a rate of N pulses per second;
- shaping the pulse laser light into a beam having a cross section perpendicular to a propagation direction of the beam, said cross section having a width and a length, wherein the length is longer than the width, wherein the beam has a width L (m) perpendicular to the length direction, and the beam having substantially a constant energy distribution along a lengthwise direction;
- applying the beam to a portion of the semiconductor film;
- and
- scanning the semiconductor film with the beam perpendicular to the lengthwise direction of the cross section at a speed V (m/s),
- wherein the scanning step is conducted in air,
- wherein the number of beams applied to said portion in one scan satisfies a relationship 3≦LN/V≦100, and
- wherein the width L (m) is defined as a beam in a region having 5% or more of an energy density with respect to a maximum energy density of the beam on the irradiation surface.
6 more elements
A method of manufacturing a semiconductor device comprising:
- forming an insulating film including TEOS over a substrate;
- forming a semiconductor film over the insulating film;
- emitting a pulse laser light at a rate of N pulses per second;
- shaping the pulse laser light into a beam having a cross section perpendicular to a propagation direction of the beam, said cross section having a width and a length, wherein the length is longer than the width, wherein the beam has a width L (m) perpendicular to the length direction, and the beam having substantially a constant energy distribution along a lengthwise direction;
- applying the beam to a portion of the semiconductor film;
- and
- crystallizing the semiconductor film by scanning the semiconductor film with the beam perpendicular to the lengthwise direction of the cross section at a speed V (m/s),
- wherein the number of beams applied to said portion in one scan satisfies a relationship 3≦LN/V≦100, and
- wherein the width L (m) is defined as a beam in a region having 5% or more of an energy density with respect to a maximum energy density of the beam on the irradiation surface.
6 more elements
A method of manufacturing a semiconductor device comprising:
- forming an insulating film including TEOS over a substrate;
- forming a semiconductor film over the insulating film;
- removing hydrogen from the semiconductor film by heating the semiconductor film;
- emitting a pulse laser light at a rate of N pulses per second;
- shaping the pulse laser light into a beam having a cross section perpendicular to a propagation direction of the beam, said cross section having a width and a length, wherein the length is longer than the width, wherein the beam has a width L (m) perpendicular to the length direction, and the beam having substantially a constant energy distribution along a lengthwise direction;
- applying the beam to a portion of the semiconductor film;
- and
- scanning the semiconductor film with the beam perpendicular to the lengthwise direction of the cross section at a speed V (m/s),
- wherein the number of beams applied to said portion in one scan satisfies a relationship 3≦LN/V<100, and
- wherein the width L (m) is defined as a beam in a region having 5% or more of an energy density with respect to a maximum energy density of the beam on the irradiation surface.
7 more elements
A method of manufacturing a semiconductor device comprising:
- forming a semiconductor film over a substrate;
- adding a metal element for accelerating crystallization of silicon to the semiconductor film;
- crystallizing the semiconductor film by heating the semiconductor film;
- emitting a pulse laser light at a rate of N pulses per second;
- shaping the pulse laser light into a beam having a cross section perpendicular to a propagation direction of the beam, said cross section having a width and a length, wherein the length is longer than the width, wherein the beam has a width L (m) perpendicular to the length direction, and the beam having substantially a constant energy distribution along a lengthwise direction;
- applying the beam to a portion of the semiconductor film;
- and
- scanning the semiconductor film with the beam perpendicular to the lengthwise direction of the cross section at a speed V (m/s),
- wherein the number of beams applied to said portion in one scan satisfies a relationship 3≦LN/V≦100, and
- wherein the width L (m) is defined as a beam in a region having 5% or more of an energy density with respect to a maximum energy density of the beam on the irradiation surface.
7 more elements
Dependencies are inferred from the claim text.