Semiconductor device and method manufacturing semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsAkio Kaneko, Atsushi Yagishita, Satoshi Inaba
Life of this patent
Estimating the term…
Abstract
The disclosure concerns a method of manufacturing a semiconductor device including forming a plurality of fins made of a semiconductor material on an insulating layer; forming a gate insulating film on side surfaces of the plurality of fins; and forming a gate electrode on the gate insulating film in such a manner that a compressive stress is applied to a side surface of a first fin which is used in an NMOSFET among the plurality of fins in a direction perpendicular to the side surface and a tensile stress is applied to a side surface of a second fin which is used in a PMOSFET among the plurality of fins in a direction perpendicular to the side surface.
Claims21
A method of manufacturing a semiconductor device comprising:
- forming a plurality of fins made of a semiconductor material on an insulating layer;
- forming a gate insulating film on side surfaces of the plurality of fins;
- and
- forming a gate electrode on the gate insulating film in such a manner that a compressive stress is applied to a side surface of a first fin which is used in an NMOSFET among the plurality of fins in a direction perpendicular to the side surface and a tensile stress is applied to a side surface of a second fin which is used in a PMOSFET among the plurality of fins in a direction perpendicular to the side surface.
A method of manufacturing a semiconductor device comprising:
- forming a plurality of fins made of a semiconductor material on an insulating layer;
- forming a gate insulating film on side surfaces of the plurality of fins;
- forming a gate electrode on the gate insulating film;
- and
- forming a stress film in such a manner that a tensile stress is applied to a side surface of a first fin which is used in an NMOSFET among the plurality of fins in a current flow direction of the NMOSFET and a compressive stress is applied to a side surface of a second fin which is used in a PMOSFET among the plurality of fins in a current flow direction of the PMOSFET, the stress film being formed on side surfaces of the first fin, on side surfaces of the second fin and on side surfaces of the gate electrode.
A semiconductor device comprising:
- an insulating layer;
- a plurality of fins made of a semiconductor material on the insulating layer;
- a gate insulating film provided on side surfaces of the plurality of fins;
- and
- a gate electrode on the gate insulating film, the gate electrode applying a compressive stress to a side surface of a first fin which is used in an NMOSFET among the plurality of fins in a direction perpendicular to the side surface and applying a tensile stress to a side surface of a second fin which is used in a PMOSFET among the plurality of fins in a direction perpendicular to the side surface.
A semiconductor device comprising:
- an insulating layer;
- a plurality of fins made of a semiconductor material on the insulating layer;
- a gate insulating film provided on side surfaces of the plurality of fins;
- a gate electrode on the gate insulating film;
- and
- a stress film applying a tensile stress to a side surface of a first fin which is used in an NMOSFET among the plurality of fins in a current flow direction of the NMOSFET and applying a compressive stress to a side surface of a second fin which is used in a PMOSFET among the plurality of fins in a current flow direction of the PMOSFET, the stress film being formed on side surfaces of a source and a drain regions of the fins.
A semiconductor device comprising:
- a plurality of fins made of a semiconductor material;
- a gate insulating film formed on a side surface of each of the plurality of fins;
- a gate electrode formed on the gate insulating film;
- and
- a stress material buried between the fins and gives the same stress to the fins in the NMOSFET region and the PMOSFET region, whereby the mobility of both of the NMOSFET and the PMOSFET is enhanced by the stress from the stress material.
Dependencies are inferred from the claim text.