Method for forming poly-silicon thin-film device
AssigneeIndustrial Technology Research Institute
InventorsFang-Tsun Chu, Yu-Cheng Chen
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Abstract
A method for forming a poly-silicon thin-film device, comprising steps of: providing a substrate; forming a poly-silicon film on the substrate, the poly-silicon film comprising a plurality of poly-silicon grains oriented in a grain growth direction; and forming a plurality of thin-film transistors, each of the thin-film transistors including a channel region formed from a portion of the poly-silicon film; wherein at least one channel region has an equivalent parallel channel region with a channel direction parallel to the grain growth direction and an equivalent perpendicular channel region with a channel direction perpendicular to the grain growth direction.
Claims10
A method for forming a poly-silicon thin-film device, comprising steps of:
- providing a substrate;
- forming a poly-silicon film on the substrate, the poly-silicon film comprising a plurality of poly-silicon grains oriented in a grain growth direction;
- and
- forming a plurality of thin-film transistors, each of the thin-film transistor including a channel region formed from a portion of the poly-silicon film;
- wherein at least one channel region has an equivalent parallel channel region with a channel direction parallel to the grain growth direction and an equivalent perpendicular channel region with a channel direction perpendicular to the grain growth direction.
Dependencies are inferred from the claim text.