Strained silicon-on-insulator transistors with mesa isolation
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYee-Chia Yeo, Chenming Hu
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Abstract
A silicon-on-insulator semiconductor device which includes a substrate; and insulator layer overlying the substrate; a plurality of strained silicon islands overlying the insulator layer, the strained silicon islands are isolated from each other by mesa isolation; and a plurality of transistors formed on the strained silicon islands. A method for fabricating the silicon-on-insulator semiconductor device is further disclosed.
Claims18
1-11. (canceled)
A method for forming strained silicon-on-insulator transistors comprising steps of:
- providing a strained silicon-on-insulator substrate comprising a strained silicon layer overlying an insulator layer;
- forming strained silicon islands in said strained silicon layer that are electrically isolated from each other by mesa isolation;
- and
- forming transistors on the strained silicon islands.
A method for forming strained silicon-on-insulator transistors comprising the steps of:
- providing a strained silicon-on-insulator substrate comprising a strained silicon layer overlying an insulator layer;
- forming strained silicon islands in said strained silicon layer that are electrically isolated from each other by mesa isolation;
- forming rounded corners on said strained silicon islands;
- and
- forming transistors on said strained silicon islands.
Dependencies are inferred from the claim text.