Method for manufacturing semiconductor device with protection layer

A method for manufacturing a wafer level semiconductor device, the method comprising:

• preparing a wafer having a front surface and a back surface, the wafer having a plurality of semiconductor chips and scribe lines provided between the semiconductor devices;
• sawing the wafer along the scribe lines to form grooves between the semiconductor chips;
• forming a protection layer on the back surface and within the grooves;
• and
• sawing a portion of the protection layer within the grooves to form individual semiconductor devices each with a protection layer.

A method for manufacturing a semiconductor device, the method comprising:

• preparing a wafer having a front surface and a back surface, the wafer having a plurality of semiconductor chips and scribe lines provided between the adjacent semiconductor devices;
• half cutting the wafer along the scribe lines of the front surface;
• attaching a tape to the front surface of the wafer;
• sawing the back surface of the wafer to form grooves between the adjacent semiconductor chips;
• forming a protection layer on the back surface and within the grooves;
• curing the protection layer;
• sawing a portion of the protection layer within the grooves to form individual semiconductor devices each with a protection layer;
• and
• separating the individual semiconductor devices from the tape.

A method of protecting a semiconductor device taken from a wafer of semiconductor devices, the method comprising:

• supporting the wafer at a front surface thereof;
• forming a gap of given width between semiconductor devices of the wafer to expose side surfaces of the semiconductor devices;
• attaching concurrently a protective material to a backside of the wafer and the side surfaces;
• removing a first portion of the protective material within the gap to leave a second portion thereof attached to the side surfaces;
• and
• removing support of the wafer at the front surface thereof.