US 2007/0190681 A1 · Silicon-on-insulator near infrared active pixel sensor array

Abstract

A method is provided for forming a near infrared (NIR) active pixel sensor array on a silicon-on-insulator (SOI) substrate. The method forms a first wafer comprising a high resistance first Si substrate and a moderately doped first Si layer, and forms a second wafer comprising a first silicon oxide layer and a second Si layer. The method bonds the first wafer to the second wafer, forming a SOI substrate. Then, a diode is formed with a p-n junction space charge region extending into the first Si substrate. A thin-film transistor (TFT) is formed in the second Si layer, and interconnects are formed between the TFT and the diode. For example, first Si substrate may have a resistivity of greater than 100 ohm-cm, and the first Si layer may have a dopant concentration in the range of about 1×1016 to about 5×1018 cm−3.

Claims20

Dependent claims

A method for forming a near infrared (NIR) active pixel sensor array on a silicon-on-insulator (SOI) substrate, the method comprising:

forming a first wafer comprising a high resistance first Si substrate and a moderately doped first Si layer;
forming a second wafer comprising a first silicon oxide layer and a second Si layer;
bonding the first wafer to the second wafer, forming a SOI substrate;
forming a diode with a p-n junction space charge region extending into the first Si substrate;
forming a thin-film transistor (TFT) in the second Si layer;
and,
forming interconnects between the TFT and the diode.

4 more elements

Dependencies are inferred from the claim text.

Silicon-on-insulator near infrared active pixel sensor array

Life of this patent

Silicon-on-insulator near infrared active pixel sensor array

Life of this patent

Abstract

Claims20