Nitride semiconductor thin film having fewer defects and method of growing the same

A method of growing a nitride semiconductor thin film having fewer defects, comprising:

• a first step of forming a buffer layer on an entire top surface of a substrate with grooves formed thereon;
• a second step of growing a first nitride semiconductor thin film on the buffer layer;
• a third step of forming a dielectric mask pattern on the first nitride semiconductor thin film such that the first nitride semiconductor thin film grown on regions of the substrate where the grooves are formed are exposed and the first nitride semiconductor thin film grown on regions of the substrate where the grooves are not formed are masked;
• and
• a fourth step of laterally growing a second nitride semiconductor thin film on regions of the first nitride semiconductor thin film, which are exposed through the dielectric mask pattern, using the dielectric mask pattern.

A nitride semiconductor thin film having fewer defects, comprising:

• a substrate with grooves formed thereon;
• a buffer layer formed on an entire top surface of the substrate;
• a first nitride semiconductor thin film formed on the buffer layer and patterned such that regions thereof formed on the grooves protrude upward;
• and
• a second nitride semiconductor thin film laterally grown on the first nitride semiconductor thin film using the pattern of the first nitride semiconductor thin film.

A nitride semiconductor thin film having fewer defects, comprising:

• a substrate with grooves formed thereon;
• a buffer layer formed on an entire top surface of the substrate;
• a first nitride semiconductor thin film formed on the buffer layer;
• a dielectric mask pattern formed on the first nitride semiconductor thin film;
• and
• a second nitride semiconductor thin film laterally grown on regions of the first nitride semiconductor thin film which are exposed through the dielectric mask pattern.