Semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, image display device, manufacturing method thereof, illuminating device and manufacturing method thereof

A method of manufacturing an integrated semiconductor light emitting device integrating a plurality of integrated light emitting elements comprising:

• growing a first semiconductor layer of a first conduction type on a major surface of a substrate;
• forming a growth mask having an opening at a predetermined position on the first semiconductor layer;
• selectively growing a second semiconductor layer of the first conduction type on the first semiconductor layer exposed through the opening in the growth mask so as to form a convex crystal portion having an inclined crystal plane composed of a plurality of crystal planes inclined from the major surface by different angles of inclination to exhibit a convex plane as a whole;
• and
• sequentially growing at least an active layer and a semiconductor layer of a second conduction type to cover the second semiconductor layer.

A method of manufacturing an image display device integrating a plurality of integrated light emitting elements comprising:

• growing a first semiconductor layer of a first conduction type on a major surface of a substrate;
• forming a growth mask having openings at a predetermined position on the first semiconductor layer;
• selectively growing a second semiconductor layer of the first conduction type on the first semiconductor layer exposed through the opening in the growth mask so as to form a convex crystal portion having an inclined crystal plane composed of a plurality of crystal planes inclined from the major surface by different angles of inclination to exhibit a convex plane as a whole;
• and
• sequentially growing at least an active layer and a semiconductor layer of a second conduction type to cover the second semiconductor layer.

A method of manufacturing an illuminating device having a single semiconductor light emitting element or a plurality of integrated semiconductor light emitting elements comprising:

• growing a first semiconductor layer of a first conduction type on a major surface of a substrate;
• forming a growth mask having an opening at a predetermined position on the first semiconductor layer;
• selectively growing a second semiconductor layer of the first conduction type on the first semiconductor layer exposed through the opening in the growth mask so as to form a convex crystal portion having an inclined crystal plane composed of a plurality of crystal planes inclined from the major surface by different angles of inclination to exhibit a convex plane as a whole;
• and
• sequentially growing at least an active layer and the semiconductor layer of a second conduction type to cover the second semiconductor layer.