Manufacturing method of semiconductor integrated circuit device and probe card

A manufacturing method of a semiconductor integrated circuit device, comprising the steps of:

• (a) preparing a semiconductor wafer which has been divided in two or more chip regions each having a semiconductor integrated circuit formed thereover, and has, formed over the main surface of the wafer, two or more electrodes to be electrically connected to the semiconductor integrated circuit;
• (b) preparing a probe card which has two or more contact terminals which can contact the two or more electrodes;
• and
• (c) conducting electrical testing of the semiconductor integrated circuit, tips of the two or more contact terminals being contacted to the two or more electrodes,
• wherein the step (b) comprises the steps of:
• (b1) positioning, as opposed to a wiring substrate in which a first wiring is formed, based on a mark for positioning a first sheet having the two or more contact terminals to contact the two or more electrodes, a second wiring electrically connected to the two or more contact terminals and the first wiring, and a pattern with which a screw hole through which a screw can penetrate and the mark for positioning are formed;
• and
• (b2) after the step (b1), attaching the first sheet over the wiring substrate in a state that a domain in which the two or more contact terminals are formed of the first sheet, can be pressed from a back of the first sheet.