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US 2007/0190670 A1Published application
Method of making ferroelectric and dielectric layered superlattice materials and memories utilizing same
OwnerCarl A. Forestinventor
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Abstract
A method of making a ferroelectric integrated circuit comprising: depositing a thin film of a layered superlattice material using atomic layer deposition (ALD); and completing the integrated circuit. The layered superlattice material is a ferroelectric material or a dielectric material. The method further comprises annealing the thin film using a short RTP process.
Claims12
A method of making a ferroelectric integrated circuit, said method comprising:
- depositing a thin film of a layered superlattice material using atomic layer deposition (ALD);
- and
- completing said integrated circuit to incorporate said thin film as a component of said integrated circuit.
Dependencies are inferred from the claim text.