Method of manufacturing a magnetoelectronic device

A method of improving performance of a magnetoresistive device, the method comprising:

• providing a memory cell comprising:
• a memory element, a first program line, and a second program line, with the memory element located between the first program line and the second program line;
• and
• an electrically insulating material located at least between the first program line and the memory element and between the memory element and the second program line;
• and
• increasing a magnetic permeability of the electrically insulating material by implanting a magnetic material within the electrically insulating material.

A method of manufacturing a magnetoresistive memory having enhanced magnetic permeability, the method comprising the steps of:

• providing a magnetoresistive memory cell comprising:
• a plurality of metal layers including at least a digit line and a bit line;
• a memory element between the digit line and the bit line;
• and
• a spacer material between the bit line and the memory element and between the memory element and the digit line;
• and
• implanting a magnetic material into the spacer material such that the magnetic material increases a magnetic permeability of the spacer material.