Material for forming exposure light-blocking film, multilayer interconnection structure and manufacturing method thereof, and semiconductor device

An exposure light-blocking film which is formed by use of a material for forming an exposure light-blocking film,

• wherein the material comprises at least one of:
• a silicon compound expressed by the following structural formula (1);
• and
• a silicon compound expressed by the following structural formula (2),
• wherein in the structural formulae (1) and (2) at least one of R1 and R2 is replaced by a substitutent capable of absorbing exposure light.
• (where R1 and R2 may be the same or different, and each represents any one of a hydrogen atom, alkyl group, alkenyl group, cycloalkyl group and aryl group which are optionally substituted, and n is an integer of 2 or greater)
• (where R1, R2 and R3 may be the same or different, at least one of R1, R2 and R3 represents a hydrogen atom and the others represent any one of an alkyl group, alkenyl group, cycloalkyl group and aryl group which are optionally substituted, and n is an integer of 2 or greater)

A multilayer interconnection structure, comprising:

• an exposure light-blocking film;
• a porous insulating film;
• and
• an interconnection layer,
• wherein the exposure light-blocking film is formed by use of a material for forming an exposure light-blocking film,
• wherein the material comprises at least one of:
• a silicon compound expressed by the following structural formula (1);
• and
• a silicon compound expressed by the following structural formula (2),
• wherein in the structural formulae (1) and (2) at least one of R1 and R2 is replaced by a substitutent capable of absorbing exposure light.
• (where R1 and R2 may be the same or different, and each represents any one of a hydrogen atom, alkyl group, alkenyl group, cycloalkyl group and aryl group which are optionally substituted, and n is an integer of 2 or greater)
• (where R1, R2 and R3 may be the same or different, at least one of R1, R2 and R3 represents a hydrogen atom and the others represent any one of an alkyl group, alkenyl group, cycloalkyl group and aryl group which are optionally substituted, and n is an integer of 2 or greater)

A method for manufacturing a multilayer interconnection structure, comprising:

• forming an exposure light-blocking film by use of a material for forming an exposure light-blocking film;
• forming a porous insulating film on the exposure light-blocking film;
• curing the porous insulating film by irradiating the porous insulating film with exposure light;
• and
• forming an interconnection,
• wherein the material for forming an exposure light-blocking film comprises at least one of:
• a silicon compound expressed by the following structural formula (1);
• and
• a silicon compound expressed by the following structural formula (2),
• wherein in the structural formulae (1) and (2) at least one of R1 and R2 is replaced by a substitutent capable of absorbing exposure light, and wherein
• the multilayer interconnection structure comprises the exposure light-blocking film, the porous insulating film, and the interconnection layer.
• (where R1 and R2 may be the same or different, and each represents any one of a hydrogen atom, alkyl group, alkenyl group, cycloalkyl group and aryl group which are optionally substituted, and n is an integer of 2 or greater)
• (where R1, R2 and R3 may be the same or different, at least one of R1, R2 and R3 represents a hydrogen atom and the others represent any one of an alkyl group, alkenyl group, cycloalkyl group and aryl group which are optionally substituted, and n is an integer of 2 or greater)

A semiconductor device, comprising:

• a multilayer interconnection structure which comprises an exposure light-blocking film, a porous insulating film, and an interconnection layer,
• wherein the exposure light-blocking film is formed by use of a material for forming an exposure light-blocking film,
• wherein the material comprises at least one of:
• a silicon compound expressed by the following structural formula (1);
• and
• a silicon compound expressed by the following structural formula (2),
• wherein in the structural formulae (1) and (2) at least one of R1 and R2 is replaced by a substitutent capable of absorbing exposure light.
• (where R1 and R2 may be the same or different, and each represents any one of a hydrogen atom, alkyl group, alkenyl group, cycloalkyl group and aryl group which are optionally substituted, and n is an integer of 2 or greater)
• (where R1, R2 and R3 may be the same or different, at least one of R1, R2 and R3 represents a hydrogen atom and the others represent any one of an alkyl group, alkenyl group, cycloalkyl group and aryl group which are optionally substituted, and n is an integer of 2 or greater)

A method for manufacturing a semiconductor device, comprising:

• forming a multilayer interconnection structure on a work surface using a method for manufacturing a multilayer interconnection structure,
• wherein the method for manufacturing a multilayer interconnection structure comprises:
• forming an exposure light-blocking film by use of a material for forming an exposure light-blocking film;
• forming a porous insulating film on the exposure light-blocking film;
• curing the porous insulating film by irradiating the porous insulating film with exposure light;
• and
• forming an interconnection,
• wherein the material for forming an exposure light-blocking film comprises at least one of:
• a silicon compound expressed by the following structural formula (1);
• and
• a silicon compound expressed by the following structural formula (2),
• wherein in the structural formulae (1) and (2) at least one of R1 and R2 is replaced by a substitutent capable of absorbing exposure light, and wherein
• the semiconductor device comprises the multilayer interconnection structure which comprises the exposure light-blocking film, the porous insulating film, and the interconnection layer.
• (where R1 and R2 may be the same or different, and each represents any one of a hydrogen atom, alkyl group, alkenyl group, cycloalkyl group and aryl group which are optionally substituted, and n is an integer of 2 or greater)
• (where R1, R2 and R3 may be the same or different, at least one of R1, R2 and R3 represents a hydrogen atom and the others represent any one of an alkyl group, alkenyl group, cycloalkyl group and aryl group which are optionally substituted, and n is an integer of 2 or greater)