Semiconductor device and method for manufacturing same

A method for manufacturing a semiconductor device including a semiconductor substrate;

• an insulating film formed on or over said semiconductor substrate;
• a barrier metal film, formed on said insulating film;
• and an electrically conducting film formed on said barrier metal film so as to be in contact with said barrier metal film, and containing copper, a metal having a standard electrode potential that is lower than that of copper, and carbon, wherein a distribution of carbon concentration along a depositing direction in said electrically conducting film includes a first peak and a second peak, and wherein said metal having a standard electrode potential that is lower than that of copper is contained in an interface between said electrically conducting film and said barrier metal film at higher concentration than in other regions, said method comprising:
• forming a concave portion in an insulating film formed on or over a semiconductor substrate;
• forming a barrier metal film in said concave portion;
• forming a seed metallic film in said concave portion, said seed metallic film containing copper, a metal having a standard electrode potential that is lower than that of copper;
• and
• filling said concave portion with a plated film containing copper by an electrolytic plating process utilizing said seed metallic film as an electrode and employing a copper plating solution that contains a polymer having molecular weight equal to or more than 500 to equal to or less than 2,000 as an inhibitor,
• wherein said filling the concave portion with said plated film includes:
• a first operation for performing said electrolytic plating process by utilizing a first current density;
• and a second operation for performing said electrolytic plating process by utilizing a current density that is higher than said first current density, after said first operation.

A method for manufacturing a semiconductor device, comprising:

• forming a concave portion in an insulating film formed on or over a semiconductor substrate;
• forming a barrier metal film in said concave portion;
• forming a seed metallic film in said concave portion, said seed metallic film containing copper, a metal having a standard electrode potential that is lower than that of copper;
• and
• filling said concave portion with a plated film containing copper by an electrolytic plating process utilizing said seed metallic film as an electrode and employing a copper plating solution that contains a polymer having molecular weight equal to or more than 500 to equal to or less than 2,000 as an inhibitor,
• wherein said filling the concave portion with said plated film includes:
• a first operation for performing said electrolytic plating process by utilizing a first current density;
• and a second operation for performing said electrolytic plating process by utilizing a current density that is higher than said first current density, after said first operation, and
• wherein, in said first operation and said second operation, carbon is introduced in said seed metallic film and said plated film so that distributions of carbon concentration in depositing direction in said seed metallic film and in said plated film have a first peak and a second peak.