Method for repairing errors of patterns embodied in thin layers
AssigneeCommissariat a l'Energie Atomique
InventorLaurent Pain
Life of this patent
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Abstract
A fabrication method in thin layers, for example of integrated electronic circuits or MEMS. A correction method allows design errors made for example by photolithography in a thin layer to be repaired, and without necessarily having to utilize a new mask or without having to correct an erroneous mask. A lithography device allows certain of operations of such a method to be employed.
Claims27
1-26. (canceled)
A correction method for correction of an erroneous design made in a first thin layer including at least one first engraved sub-layer including the erroneous design and at least one second sub-layer located between a substrate and the first sub-layer, the method comprising:
- a) depositing a second thin layer on the first thin layer;
- b) engraving or lithography of the second thin layer, as a function of a desired correction or corrections;
- and
- c) etching the second sub-layer through the first sub-layer.
A method for correction of an erroneous design made in a first thin layer, at least partially etched, comprising:
- a) depositing a second thin layer on the first thin layer;
- b) engraving or lithography in the second thin layer as a function of a desired correction;
- and
- c) etching the first thin layer through the second thin layer.
Dependencies are inferred from the claim text.