Film forming apparatus, film forming method, and manufacturing method of light emitting element

A manufacturing method of a light emitting element, comprising:

• forming a first electrode over a substrate;
• forming a light emitting layer over the first electrode, said light emitting layer is formed by a method comprising:
• fixing the substrate to a substrate holding unit so that at least a part of a surface of the substrate is exposed;
• evaporating a vapor deposition material from an evaporation source filled with the vapor deposition material;
• irradiating the vapor deposition material which is evaporated with a laser beam;
• and
• depositing the vapor deposition material over the first electrode, and forming a second electrode,
• wherein the vapor deposition material comprises at least one selected from the group consisting of zinc sulfide, cadmium sulfide, calcium sulfide, yttrium sulfide, gallium sulfide, strontium sulfide, barium sulfide, zinc oxide, yttrium oxide, aluminum nitride, gallium nitride, indium nitride, zinc selenide, zinc telluride, calcium gallium sulfide, strontium gallium sulfide, and barium gallium sulfide.

A manufacturing method of a light emitting element, comprising:

• forming a first electrode over a substrate;
• forming a light emitting layer over the first electrode, said light emitting layer is formed by a method comprising:
• fixing the substrate to a substrate holding unit so that at least a part of a surface of the substrate is exposed;
• evaporating a vapor deposition material from an evaporation source filled with the vapor deposition material;
• irradiating the vapor deposition material which is evaporated with lamp light;
• and
• depositing the vapor deposition material over the first electrode, and forming a second electrode,
• wherein the vapor deposition material comprises at least one selected from the group consisting of zinc sulfide, cadmium sulfide, calcium sulfide, yttrium sulfide, gallium sulfide, strontium sulfide, barium sulfide, zinc oxide, yttrium oxide, aluminum nitride, gallium nitride, indium nitride, zinc selenide, zinc telluride, calcium gallium sulfide, strontium gallium sulfide, and barium gallium sulfide.

A manufacturing method of a light emitting element comprising:

• forming a first electrode over a substrate;
• forming a vapor deposition film over the first electrode;
• irradiating the vapor deposition film with a laser beam while heating the vapor deposition film;
• and
• forming a second electrode on the vapor deposition film.

A manufacturing method of a light emitting element, comprising:

• forming a first electrode over a substrate;
• forming a vapor deposition film over the first electrode;
• forming a second electrode over the vapor deposition film;
• and
• irradiating the second electrode with a laser beam.

A manufacturing method of a light emitting element comprising:

• forming a first electrode over a substrate;
• forming an insulating layer over the first electrode;
• forming a light emitting layer over the insulating layer by a vapor deposition method;
• irradiating the light emitting layer with a laser beam;
• and
• forming a second electrode over the light emitting layer.

A manufacturing method of a light emitting element, comprising:

• forming a first electrode over a substrate;
• forming a light emitting layer over the first electrode by a vapor deposition method;
• irradiating the light emitting layer with a laser beam;
• forming an insulating layer over the light emitting layer;
• and
• forming a second electrode over the insulating layer.