System, Masks, and Methods for Photomasks Optimized with Approximate and Accurate Merit Functions

A method, comprising:

• providing a first photomask pattern;
• dividing the photomask pattern into blocks;
• for each block,
• evaluating a first merit function for a pattern in the block;
• evaluating a second merit function for a pattern in the block;
• determining a adjustment parameters between the first merit function and the second merit function for the pattern in the block;
• iteratively modifying the pattern in the block based, at least in part, on the second merit function and the adjustment parameters for the pattern.

A method, comprising:

• evaluating a first forward model for a first pattern;
• evaluating a second forward model for the first pattern;
• determining adjustment parameters between the first forward model and the second forward model for the first pattern;
• iteratively modifying the first pattern based, at least in part, on the second forward model and the adjustment parameters for the first pattern.

A method, comprising:

• providing a first photomask pattern;
• dividing the photomask pattern into a plurality of blocks;
• for each block in the plurality of blocks,
• evaluating a first forward model for a pattern in the block;
• evaluating a second forward model for a pattern in the block;
• determining a adjustment parameters between the first forward model and the second forward model for the pattern in the block;
• iteratively modifying the pattern in the block based, at least in part, on the second forward model and the adjustment parameters for the pattern.

A computer-program product for use in conjunction with a computer system, the computer-program product comprising a computer-readable storage medium and a computer-program mechanism embedded therein for determining a mask pattern to be used on a photo-mask in a photolithographic process, the computer-program mechanism including:

• instructions for evaluating a first forward model for a first pattern;
• instructions for evaluating a second forward model for the first pattern;
• instructions for determining adjustment parameters between the first forward model and the second forward model for the first pattern;
• instructions for iteratively modifying the first pattern based, at least in part, on the second forward model and the adjustment parameters for the first pattern.

A computer-program product for use in conjunction with a computer system, the computer-program product comprising a computer-readable storage medium and a computer-program mechanism embedded therein for determining a mask pattern to be used on a photo-mask in a photolithographic process, the computer-program mechanism including:

• instructions for providing a first photomask pattern;
• instructions for dividing the photomask pattern into a plurality of blocks;
• for each block in the plurality of blocks,
• instructions for evaluating a first forward model for a pattern in the block;
• instructions for evaluating a second forward model for a pattern in the block;
• instructions for determining a adjustment parameters between the first forward model and the second forward model for the pattern in the block;
• instructions for iteratively modifying the pattern in the block based, at least in part, on the second forward model and the adjustment parameters for the pattern.

A computer system, comprising:

• at least one processor;
• at least one memory;
• and
• at least one program module, the program module stored in the memory and configured to be executed by the processor, wherein at least the program module is for determining a mask pattern to be used on a photo-mask in a photolithographic process, the at least one program module including:
• instructions for evaluating a first forward model for a first pattern;
• instructions for evaluating a second forward model for the first pattern;
• instructions for determining adjustment parameters between the first forward model and the second forward model for the first pattern;
• instructions for iteratively modifying the first pattern based, at least in part, on the second forward model and the adjustment parameters for the first pattern.

A computer system, comprising:

• at least one processor;
• at least one memory;
• and
• at least one program module, the program module stored in the memory and configured to be executed by the processor, wherein at least the program module is for determining a mask pattern to be used on a photo-mask in a photolithographic process, the at least one program module including:
• instructions for providing a first photomask pattern;
• instructions for dividing the photomask pattern into a plurality of blocks;
• for each block in the plurality of blocks,
• instructions for evaluating a first forward model for a pattern in the block;
• instructions for evaluating a second forward model for a pattern in the block;
• instructions for determining a adjustment parameters between the first forward model and the second forward model for the pattern in the block;
• instructions for iteratively modifying the pattern in the block based, at least in part, on the second forward model and the adjustment parameters for the pattern.

A photo-mask for use in a photolithographic process, wherein a mask pattern to which the photo-mask corresponds is determined in a process including the operations of:

• evaluating a first forward model for a first pattern;
• evaluating a second forward model for the first pattern;
• determining adjustment parameters between the first forward model and the second forward model for the first pattern;
• iteratively modifying the first pattern based, at least in part, on the second forward model and the adjustment parameters for the first pattern.

A photo-mask for use in a photolithographic process, wherein a mask pattern to which the photo-mask corresponds is determined in a process including the operations of:

• providing a first photomask pattern;
• dividing the photomask pattern into a plurality of blocks;
• for each block in the plurality of blocks,
• evaluating a first forward model for a pattern in the block;
• evaluating a second forward model for a pattern in the block;
• determining a adjustment parameters between the first forward model and the second forward model for the pattern in the block;
• iteratively modifying the pattern in the block based, at least in part, on the second forward model and the adjustment parameters for the pattern.

A semiconductor wafer, wherein the semiconductor wafer is produced in a photo-lithographic process that includes a photo-mask, and wherein a mask pattern to which the photo-mask corresponds is determined in a process including the operations of:

• evaluating a first forward model for a first pattern;
• evaluating a second forward model for the first pattern;
• determining adjustment parameters between the first forward model and the second forward model for the first pattern;
• iteratively modifying the first pattern based, at least in part, on the second forward model and the adjustment parameters for the first pattern.

A semiconductor wafer, wherein the semiconductor wafer is produced in a photo-lithographic process that includes a photo-mask, and wherein a mask pattern to which the photo-mask corresponds is determined in a process including the operations of:

• providing a first photomask pattern;
• dividing the photomask pattern into a plurality of blocks;
• for each block in the plurality of blocks,
• evaluating a first forward model for a pattern in the block;
• evaluating a second forward model for a pattern in the block;
• determining a adjustment parameters between the first forward model and the second forward model for the pattern in the block;
• iteratively modifying the pattern in the block based, at least in part, on the second forward model and the adjustment parameters for the pattern.