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US 2007/0186072 A1Published application
Memory systems capable of reducing electromagnetic interference in data lines
AssigneeSamsung Electronics Co., Ltd.
InventorMi-Young Woo
Life of this patent
Estimating the term…
Abstract
A memory system capable of reducing electromagnetic interference in data lines includes a memory controller and a synchronous semiconductor memory device. The memory controller controls the phases of write data strobe signals, which fetch write data transmitted through respective data lines. The synchronous semiconductor memory device receives the write data and controls the phases of read data strobe signals to be different from each other.
Claims20
A memory system comprising:
- a memory controller configured to control phases of a first and a second write data strobe signals to be different from each other, and configured to receive read data, the first and second write data strobe signals fetching write data transmitted through data lines;
- and
- a synchronous memory device configured to receive the fetched write data, and configured to control phases of a first and a second read data strobe signal to be different from each other, the first and second read data strobe signals fetching read data transmitted through the data lines.
A memory system comprising:
- a memory controller configured to transmit write data through data lines based on a first write data strobe signal and a second write data strobe signal, the first and second write data strobe signals having different phases, and the memory controller being further configured to receive read data;
- and
- a synchronous memory device configured to receive the transmitted write data and transmit read data to the memory controller based on a first read data strobe signal and a second read data strobe signal, the first and second read data strobe signals having different phases.
Dependencies are inferred from the claim text.