Method and system for deriving time-dependent dielectric breakdown lifetime
OwnerEu Foo, Yong Lowinventors
Life of this patent
Estimating the term…
Abstract
A method and system for deriving Time Dependent Dielectric Breakdown (TDDB) lifetime of a batch of semiconductor devices, the method comprising, defining a qualifying criteria based on past measurement data; measuring at least one parameter of one or more semiconductor devices representative of the batch; comparing said at least one parameter against the qualifying criteria; and if said at least one parameter qualifies according to the qualifying criteria, deriving the TDDB lifetime for the batch based on the past measurement data and an electrical measurement of the semiconductor devices.
Claims13
A method of deriving Time Dependent Dielectric Breakdown (TDDB) lifetime of a batch of semiconductor devices, the method comprising,
- defining a qualifying criteria based on past measurement data;
- measuring at least one parameter of one or more semiconductor devices representative of the batch;
- comparing said at least one parameter against the qualifying criteria;
- and if said at least one parameter qualifies according to the qualifying criteria,
- deriving the TDDB lifetime for the batch based on the past measurement data and an electrical measurement of the semiconductor devices.
A computer readable data storage medium having stored thereon computer code means for instructing a computer processor to execute a method of deriving Time Dependent Dielectric Breakdown (TDDB) lifetime of a batch of semiconductor devices, the method comprising,
- defining a qualifying criteria based on past measurement data;
- measuring at least one parameter of one or more semiconductor devices representative of the batch;
- comparing said at least one parameter against the qualifying criteria;
- and if said at least one parameter qualifies according to the qualifying criteria,
- deriving the TDDB lifetime for the batch based on the past measurement data and an electrical measurement of the semiconductor devices.
A system for deriving Time Dependent Dielectric Breakdown (TDDB) lifetime of a batch of semiconductor devices, the system comprising,
- a database for storing past measurement data;
- a first interface for inputting a qualifying criteria based on the past measurement data;
- a second interface for inputting least one parameter measurement of one or more semiconductor devices representative of the batch;
- a processor for comparing said inputted at least one parameter measurement against said inputted qualifying criteria;
- and if said at least one parameter measurement qualifies according to the qualifying criteria,
- the processor derives the TDDB lifetime for the batch based on the past measurement data and an electrical measurement of the semiconductor devices.
Dependencies are inferred from the claim text.