Cleaning agent and method of removing residue left after plasma process
AssigneeUnited Microelectronics Corp.
InventorsCheng-Ming Weng, Miao-Chun Lin, Mei-Chi Wang, Jiunn-Hsiung Liao, Wei-Cheng Yang
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Abstract
A method of removing the residue left after a plasma process is described. First, a substrate having at least a material layer thereon is provided. The material layer includes a metal. Then, a fluorine-containing plasma process is performed so that a residue containing the aforesaid metallic material is formed on the surface of the material layer. After that, a wet cleaning operation is performed using a cleaning agent to remove the residue. The cleaning agent is a solution containing water, a diluted hydrofluoric acid and an acid solution.
Claims20
A cleaning agent suitable for removing a compound containing titanium fluoride;
- the cleaning agent comprising:
- an acid solution, wherein the percentage by weight of the acid solution in the cleaning agent is greater than or equal to 1%;
- diluted hydrofluoric acid having a concentration of greater than or equal to 30 ppm;
- and water.
A method of removing residue left after a plasma process, comprising the steps of:
- providing a substrate having at least a material layer formed thereon, wherein the material layer comprises a metal;
- performing a fluorine-containing plasma process thus a residue containing the metal is produced on the surface of the material layer;
- and
- performing a wet cleaning operation using a cleaning agent to remove the residue, wherein the cleaning agent comprises water, diluted hydrofluoric acid and an acid solution.
Dependencies are inferred from the claim text.